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High-Purity Silicon Wafer for Research

High-Purity Silicon Wafer for Research
  • Volume Discount

Part Number

Configured Part Number is shown.

Part Number
2-960-01
2-960-02
2-960-03
2-960-04
2-960-05
2-960-06
Part NumberVolume DiscountDays to Ship Size
(mm)
Manufacturer Model Specifications Footnotes Particle OF Length (mm) X Wafer Thickness Resistance Value OF Position Amount Of Content
Available

6 Days or more

2 (Inch) x P Type2XP TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles17.5±2.5X280±250.1~100Ω・cm1101 pc.
Available

6 Days or more

2 (Inch) x N Type2XN TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles17.5±2.5X280±250.1~100Ω・cm1101 pc.
Available

6 Days or more

3 (Inch) x P Type3XP TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles22.5±2.5X380±250.1~100Ω・cm1101 pc.
Available

6 Days or more

3 (Inch) x N Type3XN TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles22.5±2.5X380±250.1~100Ω・cm1101 pc.
Available

6 Days or more

4 (Inches) x P type4XP TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles32.5±2.5X525±250.1~100Ω・cm1101 pc.
Available

6 Days or more

4 (Inches) x N type4XN TypeManufacturing method: CZ method; Surface direction: 100* The direction (cutting angle), OF position angle tolerance, and thickness tolerance can be processed at finer and higher precision, enabling accurate groove formation in etching. * Various shape processing and surface processing are possible. (Examples: Countersink parts, drilled parts, wafers with oxide films)Any particles32.5±2.5X525±250.1~100Ω・cm1101 pc.

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Basic Information

Product Type Material Material Other Manufacturer Product Name High-Purity Silicon Wafer for Research
Amount Of Content 1 pc.

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